Manufacturer Product Number:
TSM2NB65CH X0G
Product Overview
Manufacturer:
Taiwan Semiconductor Corporation
DiGi Electronics Part Number:
TSM2NB65CH X0G-DG
Description:
MOSFET N-CHANNEL 650V 2A TO251
Detailed Description:
N-Channel 650 V 2A (Tc) 65W (Tc) Through Hole TO-251 (IPAK)
Inventory:
12898570
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TSM2NB65CH X0G Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Taiwan Semiconductor
Packaging
-
Series
-
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
390 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
65W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251 (IPAK)
Package / Case
TO-251-3 Stub Leads, IPak
Additional Information
Other Names
TSM2NB65CHX0G
TSM2NB65CH X0G-DG
Standard Package
75
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
TK2Q60D(Q)
MANUFACTURER
Toshiba Semiconductor and Storage
QUANTITY AVAILABLE
190
DiGi PART NUMBER
TK2Q60D(Q)-DG
UNIT PRICE
0.28
SUBSTITUTE TYPE
Similar
DIGI Certification
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